MMIC-Power Amplifier
Products and Services
The 250nm InP heterojunction bipolar transistor (HBT) technology from Teledyne Scientific and Imaging offers through its 350GHz ft , 600GHz fmax, and 4.5BVceo figures-of-merit, MMIC performance that is state-of-the-art and well beyond what is achievable from advance SiGe HBT technologies for E-band to sub-mm-wave applications. The 250nm InP HBT technology utilizes 50-Ohm/sq thin-film-resistors, MIM capacitors, and a 4-metal layer interconnect process in low loss BCB dielectric (2.7 er); this allows for dense transistor-count InP MMICs with little parasitic losses, which is ideal at G-band and sub-mm-wave frequencies.

 

190‐245GHz 50‐70mW Solid‐state Power Amplifier in 250nm InP HBT.
Part Number (PDF) Frequency Range Output Power
TSC-T04-3S4C-G1-P1 190-245 GHz 50-70 mW